maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ceo 40 v collector-emitter voltage v ces 40 v emitter-base voltage v ebo 12 v collector current i c 2.0 a power dissipation p d 2.0 w power dissipation (t c =25c) p d10 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 62.5 c/w thermal resistance jc 12.5 c/w cen-u45 npn silicon darlington transistor jedec to-202 case central semiconductor corp. tm r1 (28-august 2007) description: the central semiconductor cen-u45 type is an npn silicon monolithic darlington t ransistor designed for applications requiring high gain and high power dissipation. applications: ? designed for general purpose amplifiers and drivers electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =30v 100 na i ebo v eb =10v 100 na bv cbo i c =100a 50 v bv ces i c =100a 40 v bv ebo i e =10a 12 v v ce(sat) i c =1.0a, i b =2.0ma 1.5 v v ce(sat) i c =200ma, i b =2.0ma 1.0 v v be(sat) i c =1.0a, i b =2.0ma 2.0 v v be(on) v ce =5.0v, i c =1.0a 2.0 v marking code: full part number features: ? high collector current (2.0a) ? high dc current gain (25k min) ? low voltage (50v max)
central semiconductor corp. tm to-202 case - mechanical outline cen-u45 npn silicon darlington transistor r1 (28-august 2007) lead code: 1) emitter 2) base 3) collector marking code: full part number electrical characteristics: (continued) symbol test conditions min max units h fe v ce =5.0v, i c =200ma 25k 150k h fe v ce =5.0v, i c =500ma 15k h fe v ce =5.0v, i c =1.0a 4.0k f t v ce =5.0v, i c =200ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf
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